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1

Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

Suvarna, Puneet, Bulmer, John, Leathersich, Jeffrey M., Marini, Jonathan, Mahaboob, Isra, Hennessy, John, Bell, L. Douglas, Nikzad, Shouleh, Shahedipour-Sandvik, F. Shadi

Journal:

IEEE Photonics Technology Letters

Year:

2015

Language:

english

File:

PDF, 736 KB

english, 2015

2

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage

Bulmer, John, Suvarna, Puneet, Leathersich, Jeff, Marini, Jonathan, Mahaboob, Isra, Newman, Neil, Shahedipour-Sandvik, F. Shadi

Journal:

IEEE Photonics Technology Letters

Year:

2016

Language:

english

File:

PDF, 441 KB

english, 2016

3

Aims and Scope of JEM, Embracing the Past and Looking Toward the Future

Baniecki, John, Shahedipour-Sandvik, F.

Journal:

Journal of Electronic Materials

Year:

2018

Language:

english

File:

PDF, 287 KB

english, 2018

4

GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates

Tompkins, R. P., Smith, J. R., Kirchner, K. W., Jones, K. A., Leach, J. H., Udwary, K., Preble, E., Suvarna, P., Leathersich, J.M., Shahedipour-Sandvik, F.

Journal:

Journal of Electronic Materials

Year:

2014

Language:

english

File:

PDF, 539 KB

english, 2014

5

Design and characterization of GaN p-i-n diodes for betavoltaic devices

Khan, Muhammad R., Smith, Joshua R., Tompkins, Randy P., Kelley, Stephen, Litz, Marc, Russo, John, Leathersich, Jeff, Shahedipour-Sandvik, Fatemeh (Shadi), Jones, Kenneth A., Iliadis, Agis

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1002 KB

english, 2017

6

Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

X.A Cao, J.A Teetsov, F Shahedipour-Sandvik, S.D Arthur

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 397 KB

english, 2004

7

Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces

N. Tripathi, V. Jindal, F. Shahedipour-Sandvik, S. Rajan, A. Vert

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 517 KB

english, 2010

8

Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD

M. Tungare, V.K. Kamineni, F. Shahedipour-Sandvik, A.C. Diebold

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 427 KB

english, 2011

9

AlxGa1−xN for solar-blind UV detectors

Peter Sandvik, Kan Mi, Fatemeh Shahedipour, Ryan McClintock, Alireza Yasan, Patrick Kung, Manijeh Razeghi

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 147 KB

english, 2001

10

III-Nitride Heterostructure Layered Tunnel Barriers For a Tunable Hyperspectral Detector

Bell, L. Douglas, Tripathi, Neeraj, Grandusky, J. R., Jindal, Vibhu, Shahedipour-Sandvik, F. Shadi

Journal:

IEEE Sensors Journal

Year:

2008

Language:

english

File:

PDF, 627 KB

english, 2008

11

AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization

Tripathi, N., Bell, L. D., Shahedipour-Sandvik, F.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 2.43 MB

english, 2011

12

AlGaN devices and growth of device structures

Jones, K. A., Chow, T. P., Wraback, M., Shatalov, M., Sitar, Z., Shahedipour, F., Udwary, K., Tompa, G. S.

Journal:

Journal of Materials Science

Year:

2015

Language:

english

File:

PDF, 8.38 MB

english, 2015

13

Atomic-layer Deposition for Improved Performance of III-N Avalanche Photodiodes

Hennessy, John, Bell, L. Douglas, Nikzad, Shouleh, Suvarna, Puneet, Leathersich, Jeffrey M., Marini, Jonathan, Shahedipour-Sandvik, F. (Shadi)

Journal:

MRS Proceedings

Year:

2014

Language:

english

File:

PDF, 202 KB

english, 2014

14

Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures

Mahaboob, Isra, Hogan, Kasey, Novak, Steven W., Shahedipour-Sandvik, Fatemeh, Tompkins, Randy P., Lazarus, Nathan

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 944 KB

english, 2018

15

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Nikzad, Shouleh, Hoenk, Michael, Jewell, April, Hennessy, John, Carver, Alexander, Jones, Todd, Goodsall, Timothy, Hamden, Erika, Suvarna, Puneet, Bulmer, J., Shahedipour-Sandvik, F., Charbon, Edoardo

Journal:

Year:

2016

Language:

english

File:

PDF, 6.90 MB

english, 2016

16

3D GaN-based betavoltaic device design with high energy transfer efficiency

Hogan, Kasey, Litz, Marc, Shahedipour-Sandvik, Fatemeh

Journal:

Applied Radiation and Isotopes

Year:

2019

Language:

english

File:

PDF, 1.35 MB

english, 2019

17

In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application

Hogan, Kasey, Rodriguez, Miguel, Rocco, Emma, Meyers, Vincent, McEwen, Benjamin, Shahedipour-Sandvik, F. Shadi

Journal:

Year:

2020

File:

PDF, 1.79 MB

2020

18

Direct immobilization and hybridization of DNA on group III nitride semiconductors

Xiaobin Xu, Vibhu Jindal, Fatemeh Shahedipour-Sandvik, Magnus Bergkvist, Nathaniel C. Cady

Journal:

Applied Surface Science

Year:

2009

Language:

english

File:

PDF, 330 KB

english, 2009

19

Defect-related photoluminescence in Mg-doped GaN nanostructures

M.A. Reshchikov, F. Shahedipour-Sandvik, B.J. Messer, V. Jindal, N. Tripathi, M. Tungare

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 408 KB

english, 2009

20

Direct attachment of DNA to semiconducting surfaces for biosensor applications

Nicholas M. Fahrenkopf, Fatemeh Shahedipour-Sandvik, Natalya Tokranova, Magnus Bergkvist, Nathaniel C. Cady

Journal:

Journal of Biotechnology

Year:

2010

Language:

english

File:

PDF, 224 KB

english, 2010

21

Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes

X.A. Cao, H. Lu, E.B. Kaminsky, S.D. Arthur, J.R. Grandusky, F. Shahedipour-Sandvik

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 689 KB

english, 2007

22

Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers

J.R. Grandusky, V. Jindal, N. Tripathi, F. Shahedipour-Sandvik, H. Lu, E.B. Kaminsky, R. Melkote

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 907 KB

english, 2007

23

Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfaces

J.R. Grandusky, V. Jindal, J.E. Raynolds, S. Guha, F. Shahedipour-Sandvik

Journal:

Materials Science and Engineering: B

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

24

Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy

Vibhu Jindal, James Grandusky, Muhammad Jamil, Neeraj Tripathi, Bradley Thiel, Fatemeh Shahedipour-Sandvik, Joleyn Balch, Steven LeBoeuf

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2008

Language:

english

File:

PDF, 781 KB

english, 2008

25

Deep acceptors in undoped GaN

M.A. Reshchikov, F. Shahedipour, R.Y. Korotkov, M.P. Ulmer, B.W. Wessels

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

26

Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications

M Razeghi, P Sandvik, P Kung, D Walker, K Mi, X Zhang, V Kumar, J Diaz, F Shahedipour

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 513 KB

english, 2000

27

Development of native, single crystal AlN substrates for device applications

L. J. Schowalter, S. B. Schujman, W. Liu, M. Goorsky, M. C. Wood, J. Grandusky, F. Shahedipour-Sandvik

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 870 KB

english, 2006

28

High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures

R. J. Matyi, M. Jamil, F. Shahedipour-Sandvik

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 478 KB

english, 2007

29

A Tersoff-based interatomic potential for wurtzite AlN

Mihir Tungare, Yunfeng Shi, Neeraj Tripathi, Puneet Suvarna, Fatemeh (Shadi) Shahedipour-Sandvik

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 202 KB

english, 2011

30

Reduction of strain and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate defect engineering technique

M. Jamil, Eric Irissou, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

31

Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study

Vibhu Jindal, James Grandusky, Muhammad Jamil, Eric Irissou, Fatemeh Shahedipour Sandvik, Kevin Matocha, Vinayak Tilak

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

32

Growth and characterization of a novel hyperspectral detector using the III-nitrides

N. Tripathi, L. D. Bell, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 131 KB

english, 2008

33

Selective area heteroepitaxy of low dimensional a -plane and c -plane InGaN nanostructures using pulsed MOCVD

V. Jindal, N. Tripathi, M. Tungare, O. Paschos, P. Haldar, F. Shahedipour-Sandvik

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 516 KB

english, 2008

34

Novel Cs-Free GaN Photocathodes

Neeraj Tripathi, L. D. Bell, SHOULEH Nikzad, Mihir Tungare, Puneet H. Suvarna, Fatemeh Shahedipour Sandvik

Journal:

Journal of Electronic Materials

Year:

2011

Language:

english

File:

PDF, 412 KB

english, 2011

35

Low-Temperature Synthesis of Diamond-like Carbon Films on Steel Substrates by Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition

Shen Zhu, Fatemeh Shahedipour, Henry W. White

Journal:

Journal of the American Ceramic Society

Year:

1998

Language:

english

File:

PDF, 343 KB

english, 1998

36

In SituStress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates

Jarod C. Gagnon, Mihir Tungare, Xiaojun Weng, Jeffrey M. Leathersich, Fatemeh Shahedipour-Sandvik, Joan M. Redwing

Journal:

Journal of Electronic Materials

Year:

2012

Language:

english

File:

PDF, 595 KB

english, 2012

37

SPIE Proceedings [SPIE International Symposium on Optical Science and Technology - Seattle, WA (Sunday 7 July 2002)] Solid State Lighting II - Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes

Cao, Xian-an, Topol, K., Shahedipour-Sandvik, F., Teetsov, J., Sandvik, Peter M., LeBoeuf, Stephen E., Ebong, Abasifreke, Kretchmer, James W., Stokes, Edward B., Arthur, S., Kaloyeros, Alain E., Walke

Year:

2002

Language:

english

File:

PDF, 394 KB

english, 2002

38

Efficient GaN photocathodes for low-level ultraviolet signal detection

Shahedipour, F.S., Ulmer, M.P., Wessels, B.W., Joseph, C.L., Nihashi, T.

Journal:

IEEE Journal of Quantum Electronics

Year:

2002

Language:

english

File:

PDF, 195 KB

english, 2002

39

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Baltimore, Maryland (Monday 23 April 2012)] Advanced Photon Counting Techniques VI - Development of small unit cell avalanche photodiodes for UV imaging applications

Sood, Ashok K., Welser, Roger E., Richwine, Robert A., Puri, Yash R., Dupuis, Russell D., Ryou, Jae-Hyun, Dhar, Nibir K., Suvarna, P., Shahedipour-Sandvik, F.

Year:

2012

Language:

english

File:

PDF, 2.17 MB

english, 2012

40

Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

Shahedipour, F., Wessels, B. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 260 KB

english, 2000

41

Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes

Jindal, Vibhu, Shahedipour-Sandvik, Fatemeh

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 882 KB

english, 2009

42

Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy

Shahedipour-Sandvik, F, Leathersich, J, Tompkins, R P, Suvarna, P, Tungare, M, Walsh, T A, Kirchner, K W, Zhou, S, Jones, K A

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.04 MB

english, 2013

43

Development of strain reduced GaN on Si (111) by substrate engineering

Jamil, M., Grandusky, J. R., Jindal, V., Shahedipour-Sandvik, F., Guha, S., Arif, M.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 361 KB

english, 2005

44

Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride

Jindal, Vibhu, Shahedipour-Sandvik, Fatemeh

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.25 MB

english, 2010

45

The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates

Gagnon, Jarod C., Leathersich, Jeffrey M., Shahedipour-Sandvik, Fatemeh (Shadi), Redwing, Joan M.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

46

Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations

Leathersich, Jeff, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, F. (Shadi)

Journal:

Surface Science

Year:

2013

Language:

english

File:

PDF, 2.05 MB

english, 2013

47

Cumulative Index 2003

Leathersich, Jeff, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, F. (Shadi)

Journal:

Facial Plastic Surgery Clinics of North America

Year:

2003

Language:

english

File:

PDF, 194 KB

english, 2003

48

Deposition of GaN films on crystalline rare earth oxides by MOCVD

Leathersich, Jeff, Arkun, Erdem, Clark, Andrew, Suvarna, Puneet, Marini, Jon, Dargis, Rytis, Shahedipour-Sandvik, F. (Shadi)

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.02 MB

english, 2014

49

Hybrid n-GaN and polymer interfaces: Model systems for tunable photodiodes

Kumar, Prashant, Guha, S., Shahedipour-Sandvik, F., Narayan, K.S.

Journal:

Organic Electronics

Year:

2013

Language:

english

File:

PDF, 1.48 MB

english, 2013

50

Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate

Tungare, Mihir, Weng, Xiaojun, Leathersich, Jeffrey M., Suvarna, Puneet, Redwing, Joan M., (Shadi) Shahedipour-Sandvik, F.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.30 MB

english, 2013

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